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<title>Semiconducting electronic bandgap at boundaries</title>
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<html><blockquote class="wp-embedded-content" data-secret="a3tT1YOnx3"><a href="https://www.science.nus.edu.sg/blog/2015/02/semiconducting-electronic-bandgap-at-boundaries/">Semiconducting electronic bandgap at boundaries</a></blockquote><iframe sandbox="allow-scripts" security="restricted" src="https://www.science.nus.edu.sg/blog/2015/02/semiconducting-electronic-bandgap-at-boundaries/embed/#?secret=a3tT1YOnx3" width="600" height="338" title="“Semiconducting electronic bandgap at boundaries” — NUS Faculty of Science" data-secret="a3tT1YOnx3" frameborder="0" marginwidth="0" marginheight="0" scrolling="no" class="wp-embedded-content"></iframe><script type="text/javascript">
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<description>18 Feb 2015 NUS professors discovered semiconducting electronic bandgap tunability at grain boundaries in single atomic layer inorganic compound. Graphene...</description>